to-92 plastic-encapsulate transistors 3dd13001 transistor (npn) features z power switching applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c = 1ma,i e =0 700 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 400 450 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 8 v collector cut-off current i cbo v cb =600v,i e =0 100 a collector cut-off current i ceo v ce =400v,i b =0 100 a emitter cut-off current i ebo v eb =7v,i c =0 100 a h fe(1) v ce =20v, i c =20ma 14 29 h fe(2) v ce =10v, i c =0.25ma 5 dc current gain h fe(3) v ce =5v, i c =0.5a 1 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =10ma 0.4 v base-emitter saturation voltage v be(sat) i c =50ma,i b =10ma 1.1 v transition frequency f t v ce =20v,i c =20ma,f=1mhz 8 mhz rail time t r 0.9 s storage time t s 0.9 i c =0.1a 2.4 s classification of h fe(1) range 14-17 17-20 20-23 23-26 26-29 classification of t s range 0.9-2 ( s ) 1. 4 -2. 4 ( s ) sy mbol paramete r v alue unit v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 8 v i c collector current -continuous 0.2 a p c collector power dissipation 0.625 w t j junction temperature 150 t stg storage temperature -55 ~ 150 to-92 1. base 2. collector 3. emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2012
0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 0 10 20 30 40 0.1 1 10 1 10 100 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 10 100 0.4 0.6 0.8 1.0 1 10 100 0 1 02 03 04 05 0 0 10 20 30 40 3dd13001 collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a v be h fe ?? i c ?? 3 30 0.3 t a =100 t a =25 dc current gain h fe collector current i c (ma) v ce =20v i c 200 300 30 3 3 0.3 20 c ob c ib reverse voltage v (v) f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? capacitance c (pf) 30 3 0.3 =5 base-emitter saturation voltage v besat (v) collector current i c (ma) t a =25 t a =100 200 i c v besat ?? 30 300 30 3 0.3 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) =5 t a =25 t a =100 i c v cesat ?? 500 200 t a =25 t a =100 v ce =20v 30 3 200 collcetor current i c (ma) base-emmiter voltage v be (v) 1.5ma 1.35ma 1.2ma 1.05ma 900ua 750ua 600ua 300ua 450ua i b =150ua static characteristic common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2012
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